A review of plasma-induced defects: Detection, kinetics and advanced management
نویسندگان
چکیده
Abstract Plasma-induced defects are often recognized in state-of-the-art semiconductors, high-efficiency solar cells and high-sensitivity image sensors. These the form of a dangling bond, bond deformation, or impurity/residual, which impacts on device performance reliability. The introduced via plasma-material interactions during manufacturing processes such as deposition, etching implantation. So, management throughout is important for high-performance fabrication. In this review, we overview generation recovery plasma-induced order to develop defect-managed advanced plasma processing further improving performances. defect described, based recent results in-situ real-time detection defects. Two examples presented: growth hydrogenated amorphous silicon surface passivation crystalline cell applications.
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ژورنال
عنوان ژورنال: Journal of Physics D
سال: 2023
ISSN: ['1361-6463', '0022-3727']
DOI: https://doi.org/10.1088/1361-6463/acd9d5